UF3C065080B7S

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

23 nC @ 12 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

760 pF @ 100 V

Power Dissipation (Max)

136.4W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Cascode SiCJFET)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Rds On (Max) @ Id, Vgs

105mOhm @ 20A, 12V

Vgs(th) (Max) @ Id

6V @ 10mA

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

UF3C065080