Component information
UF3C120080B7S
UF3C120080B7S component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 23 nC @ 12 V
- Mfr
- onsemi
- Vgs (Max)
- ±25V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 754 pF @ 100 V
- Part Status
- Active
- Power Dissipation (Max)
- 190W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Cascode SiCJFET)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 1200 V
- Supplier Device Package
- D2PAK-7
- Current - Continuous Drain (Id) @ 25°C
- 28.8A (Tc)
- Package / Case
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 20A, 12V
- Base Product Number
- UF3C120080
- Vgs(th) (Max) @ Id
- 6V @ 10mA
Documentation and references
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