UF4C120053B7S

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

37.8 nC @ 15 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1370 pF @ 800 V

FET Type

N-Channel

Power Dissipation (Max)

250W (Tc)

Technology

SiCFET (Cascode SiCJFET)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

34A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

67mOhm @ 20A, 12V

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7L

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)