Component information
UHB100SC12E1BC3N
onsemi UHB100SC12E1BC3N: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: Module.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 6V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs
- 170nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds
- 5859pF @ 800V
- Power - Max
- 417W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 P-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Rds On (Max) @ Id, Vgs
- 12mOhm @ 70A, 12V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- Module
- Packaging
- Tray
Documentation and references
Documentation can be discussed with your inquiry.
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