UJ4N075004L8S

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

3.7V @ 180mA

Gate Charge (Qg) (Max) @ Vgs

400 nC @ 18 V

Vgs (Max)

+3V, -30V

Input Capacitance (Ciss) (Max) @ Vds

3028 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

1153W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

750 V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

0V, 2V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 80A, 2V

Mounting Type

Surface Mount

Supplier Device Package

TOLL

Package / Case

8-PowerSFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

UJ4C075