Component information
ULN2803APG,CN
Toshiba Semiconductor and Storage ULN2803APG,CN: Bipolar Transistor Arrays. Package / Case: 18-DIP (0.300", 7.62mm). Supplier Device Package: 18-DIP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 350mA, 2V
- Power - Max
- 760mW
- Operating Temperature
- -40°C ~ 85°C (TA)
- Transistor Type
- 8 NPN Darlington
- Current - Collector (Ic) (Max)
- 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 500µA, 350mA
- Mounting Type
- Through Hole
- Package / Case
- 18-DIP (0.300", 7.62mm)
- Supplier Device Package
- 18-DIP
- Packaging
- Tube
- Base Product Number
- ULN2803
Documentation and references
Documentation can be discussed with your inquiry.
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