Component information
UMZ1NT1G
UMZ1NT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Manufacturer
- onsemi
- Power - Max
- 250mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 114MHz, 142MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 200mA
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Base Product Number
- UMZ1
- Current - Collector Cutoff (Max)
- 2µA
Documentation and references
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