Component information
UNR421100A
Panasonic Industry UNR421100A: Single, Pre-Biased Bipolar Transistors. Package / Case: 3-SIP. Supplier Device Package: NS-B1.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Panasonic Industry
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 150 MHz
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 300 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 10 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- Mounting Type
- Through Hole
- Package / Case
- 3-SIP
- Supplier Device Package
- NS-B1
- Packaging
- Tape & Box (TB)
- Base Product Number
- UNR421
Documentation and references
Documentation can be discussed with your inquiry.
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