US6J11TR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 6V

Power - Max

320mW

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

260mOhm @ 1.3A, 4.5V

Mounting Type

Surface Mount

Package / Case

6-SMD, Flat Leads

Supplier Device Package

TUMT6

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

US6J11