Component information
US6J2TR
US6J2TR component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Manufacturer
- Rohm Semiconductor
- Gate Charge (Qg) (Max) @ Vgs
- 2.1nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 10V
- Part Status
- Not For New Designs
- Power - Max
- 1W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Configuration
- 2 P-Channel (Dual)
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 6-SMD, Flat Leads
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- TUMT6
- Current - Continuous Drain (Id) @ 25°C
- 1A
- Base Product Number
- US6J2
- Rds On (Max) @ Id, Vgs
- 390mOhm @ 1A, 4.5V
Documentation and references
Documentation can be discussed with your inquiry.
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