Component information
VS-GB200TH120N
Vishay General Semiconductor - Diodes Division VS-GB200TH120N: IGBT Modules. Package / Case: Double INT-A-PAK (3 + 4). Supplier Device Package: Double INT-A-PAK.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 5 mA
- Input Capacitance (Cies) @ Vce
- 14.9 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- No
- Configuration
- Half Bridge
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Current - Collector (Ic) (Max)
- 360 A
- Power - Max
- 1136 W
- Vce(on) (Max) @ Vge, Ic
- 2.35V @ 15V, 200A
- Mounting Type
- Chassis Mount
- Package / Case
- Double INT-A-PAK (3 + 4)
- Supplier Device Package
- Double INT-A-PAK
- Packaging
- Bulk
- Base Product Number
- GB200
Documentation and references
Documentation can be discussed with your inquiry.
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