Component information
VS-GT100TP60N
Vishay General Semiconductor - Diodes Division VS-GT100TP60N: IGBT Modules. Package / Case: INT-A-PAK (3 + 4). Supplier Device Package: INT-A-PAK.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 5 mA
- Input Capacitance (Cies) @ Vce
- 7.71 nF @ 30 V
- Input
- Standard
- NTC Thermistor
- No
- IGBT Type
- Trench
- Operating Temperature
- 175°C (TJ)
- Configuration
- Half Bridge
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Current - Collector (Ic) (Max)
- 160 A
- Power - Max
- 417 W
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 100A
- Mounting Type
- Chassis Mount
- Package / Case
- INT-A-PAK (3 + 4)
- Supplier Device Package
- INT-A-PAK
- Packaging
- Bulk
- Base Product Number
- GT100
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ