Component information
VS-GT50YF120NT
Vishay General Semiconductor - Diodes Division VS-GT50YF120NT: IGBT Modules. Package / Case: Module. Power - Max: 231 W.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Part Status
- Active
- Power - Max
- 231 W
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 50A
- Current - Collector Cutoff (Max)
- 50 µA
- Input
- Standard
- IGBT Type
- Trench Field Stop
- NTC Thermistor
- Yes
- Configuration
- Full Bridge
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Current - Collector (Ic) (Max)
- 64 A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Box
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ