Component information
VS-GT51YF120NT
Vishay General Semiconductor - Diodes Division VS-GT51YF120NT: IGBT Modules. Package / Case: Module. Power - Max: 231 W.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Part Status
- Active
- Power - Max
- 231 W
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 50A
- Current - Collector Cutoff (Max)
- 50 µA
- Input
- Standard
- IGBT Type
- Trench Field Stop
- NTC Thermistor
- Yes
- Configuration
- 2 Independent
- Operating Temperature
- -40°C ~ 150°C
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Current - Collector (Ic) (Max)
- 64 A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Box
Documentation and references
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