Component information
VT6Z1T2R
VT6Z1T2R component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 2V
- Manufacturer
- Rohm Semiconductor
- Power - Max
- 150mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Frequency - Transition
- 400MHz
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 200mA
- Package / Case
- 6-SMD
- Voltage - Collector Emitter Breakdown (Max)
- 20V
- Supplier Device Package
- VMT6
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 100mA
- Base Product Number
- VT6Z1
- Current - Collector Cutoff (Max)
- 100µA (ICBO)
Documentation and references
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