Component information
ZXTDB2M832TA
Diodes Incorporated ZXTDB2M832TA: Bipolar Transistor Arrays. Package / Case: 8-VDFN Exposed Pad. Supplier Device Package: 8-MLP (3x2).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Diodes Incorporated
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2A, 2V / 150 @ 2A, 2V
- Power - Max
- 1.7W
- Frequency - Transition
- 140MHz, 180MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max)
- 4.5A, 3.5A
- Voltage - Collector Emitter Breakdown (Max)
- 20V
- Vce Saturation (Max) @ Ib, Ic
- 270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A
- Current - Collector Cutoff (Max)
- 25nA
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- 8-MLP (3x2)
- Packaging
- Tape & Reel (TR)
- Base Product Number
- ZXTDB2M832
Documentation and references
Documentation can be discussed with your inquiry.
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