Component information
ZXTN5551GTA
ZXTN5551GTA component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Mfr
- Diodes Incorporated
- Power - Max
- 2 W
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Frequency - Transition
- 130MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 600 mA
- Package / Case
- TO-261-4, TO-261AA
- Voltage - Collector Emitter Breakdown (Max)
- 160 V
- Supplier Device Package
- SOT-223-3
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 5mA, 50mA
- Base Product Number
- ZXTN5551
- Current - Collector Cutoff (Max)
- 50nA (ICBO)
Documentation and references
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